逆反应烧结,reverse reaction sinter
1)reverse reaction sinter逆反应烧结
1.Thereverse reaction sintering process convert Si_3N_4 into reactive oxides for sintering.制备Si3N4/SiC复合材料的常规反应烧结是以Si和SiC为原料进行氮化烧结,而逆反应烧结是以Si3N4和SiC为原料,首先使Si3N4反向反应为活性氧化物后再进行烧结。
英文短句/例句
1.Effect of Si_3N_4 Granularities on Properties of Si_3N_4/SiC Composites Prepared by Converse Reaction SinteringSi_3N_4粒度对逆反应烧结制备Si_3N_4/SiC复合材料性能的影响
2.Surface Coating Technique of Reaction Bonded SiC Mirrors反应烧结碳化硅反射镜表面改性技术
3.Research of mechanism on sintered bricks made from high volume fly ash;粉煤灰烧结砖原料处理与烧结反应机理的研究
4.Study on the Friction and Wear Properties of Reaction-Bonded Silicon Carbide;反应烧结SiC陶瓷摩擦磨损性能研究
5.Study on Preparation of High-Strength SiC_W/SiC Composites by Reasction Bonded Method;反应烧结制备高强SiC_W/SiC材料的研究
6.Study on Si_3N_4 Wave-transmitting Material Fabricated by Reaction-sintering;反应烧结Si_3N_4透波材料的研究
7.Preparation and Study of Reaction-Bonded Si_3N_4 Porous Ceramics;反应烧结多孔Si_3N_4陶瓷的制备与研究
8.Research on the Erosion Wear of Reactive Sintering Silicon Carbide;反应烧结SiC陶瓷冲蚀磨损性能研究
9.Freeze Casting of Reaction Bonded Silicon Carbide;反应烧结碳化硅坯体的冷凝浇注成型
10.Reaction sintering of Al_3Ti particulate reinforced Mg matrix compositeAl_3Ti颗粒增强镁基复合材料的反应烧结
11.Preparation of Stoichiometric Boron-Carbon Ceramics by Spark Plasma SinteringSPS反应烧结不同化学计量比硼-碳陶瓷
12.Solid-state reaction synthesis and sintering of 2MgO·TiO_22MgO·TiO_2的固相反应合成与烧结
13.Reaction Behavior of Al_2O_3 and Fe_2O_3 in Na_2O-Al_2O_3-Fe_2O_3 Systems during SinteringNa_2O-Al_2O_3-Fe_2O_3系烧结过程中铝、铁的反应行为
14.Preparation of porous TiB_2-TiC multiphase ceramics by reactive sintering反应烧结制备多孔TiB_2-TiC复相陶瓷
15.Study on the reaction mechanism of Ti_3SiC_2 by melt infiltration sintering method熔渗烧结制备Ti_3SiC_2反应机理的研究
16.Structure and combustion reactivity of coal char pyrolyzed in different atmospheres不同热解气氛煤焦结构及燃烧反应性
17.Effect of reactive sintering temperature on properties of Si_3N_4-SiC refractories反应烧结温度对Si_3N_4-SiC材料性能的影响
18.Studies on the Sintering Reactions Process of Coal Fly Ash粉煤灰中硅酸盐烧结反应过程的研究
相关短句/例句
reaction sintering反应烧结
1.Microstructure and properties of Mo_2FeB_2 cermets clad layer byreaction sintering;反应烧结三元硼化物金属陶瓷覆层的组织与性能
2.Densification of laser ignitedreaction sintering of Ni-Al-Cu powder alloy;Ni-Al-Cu粉末合金激光点火反应烧结的致密化研究
3.The samples prepared by general sintering andreaction sintering are investigated by XRD,SEM and other testing means for their structure and performance.采用常规烧结法和反应烧结法烧结制品,并利用XRD和SEM等测试手段对制品的结构与性能进行了分析研究。
3)reactive sintering反应烧结
1.Preparation of cemented carbide having highly oriented WC grains byreactive sintering of W-Co-Nano carbon tubes;W-Co-纳米碳管反应烧结制备高度取向硬质合金
2.Densification behavior duringreactive sintering of compacted Ti/Al composite powders prepared by high energy ball milling;高能球磨Ti/Al复合粉体的反应烧结致密行为
3.Temperature model ofreactive sintering of Ni Al thermal spray layer;Ni-Al喷涂层中温反应烧结的温度变化模型
4)reaction-bonded反应烧结
1.Low density silicon nitride with about 55% porosity and globed macropores was prepared byreaction-bonded raw silicon powder and adding 30% in mass pore-forming agent of benzoic acid ball-like particles.以硅粉为原料,添加质量分数为30%的成孔剂(苯甲酸)球形颗粒,反应烧结制备了气孔率为55%,具有球形宏观孔的低密度多孔氮化硅陶瓷。
2.A near-net-shape SiC was prepared byreaction-bonded from a pure carbon perform which was fabricated by mould from graphite power as raw and phenolic resin as binder.以石墨粉体为原料,酚醛树脂为粘接剂,采用模压成型工艺制备了全碳质素坯,反应烧结后得到S iC材料。
3.The effects of carbon content, moulding pressure, and carbon particle size of green body on microstructure and properties ofreaction-bonded silicon carbide (RBSC) have been investigated.研究了反应烧结碳化硅陶瓷的显微组织和性能与生坯碳含量、成型压力以及碳粉粒度的关系。
5)reaction bonded反应烧结
1.SiC platelets/C preform was infiltrated with liquid silicon to preparereaction bonded silicon carbide(RBSC) materials.以液Si浸渗SiC片晶和C的坯体制备了SiC片晶增韧反应烧结SiC陶瓷材料,讨论了SiC片晶的掺加分数及烧结温度对材料显微结构和力学性能的影响,并比较了所得材料与传统反应烧结材料的力学性能。
2.The high temperature oxidation kinetics of areaction bonded silicon carbide oxided in air at 1 300℃ were investigated.研究了反应烧结碳化硅陶瓷在1300℃空气中的高温氧化行为,结果表明:高温氧化过程中在试样表面出现的非晶态SiO2晶化以及氧化膜起裂,使得该陶瓷氧化曲线遵循对数氧化规律。
3.The relation between microstructure and resistivity ofreaction bonded silicon carbide (RBSiC) is examined.研究了反应烧结碳化硅及随后经１６５０℃和１８００℃除硅处理后，材料的显微组织与电阻率之间的关系。
6)reaction-sintering反应烧结
1.Si3N4-BN composite was prepared by using Si and BN as raw materials under nitrogen gas flow at 1 450℃by thereaction-sintering method.以Si粉和BN粉为原料,Fe2O3为烧结助剂,采用反应烧结法于1450℃氮气气氛下制备了Si3N4-BN复合材料。
2.Thereaction-sintering process and microstructure of mullite-zirconia composites sintered and reacted in-situ were investigated.研究了用锆英石和工业氧化铝合成锆莫来石材料的反应烧结过程和显微结构。
3.Si3N4-BN composites were prepared byreaction-sintering method with Si and BN as raw materials under nitrogen atmosphere at 1450℃.以Si粉和BN粉为原料,采用反应烧结法于1450℃氮气气氛下制备了Si3N4-BN复合材料。
延伸阅读
逆反应分子式：分子量：CAS号：性质：见可逆反应。
