感应耦合等离子体,inductively coupled plasma
1)inductively coupled plasma感应耦合等离子体
1.Selective etching of GaN/ AlGaN by Inductively coupled plasma;感应耦合等离子体选择性刻蚀GaN/AlGaN
2.We attempt to investigate the influence of the processing chamber configuration of aninductively coupled plasma(ICP)etcher on flow field characteristics.为研究感应耦合等离子体(ICP)刻蚀机工艺腔室结构对流场特性的影响,采用回归正交设计方法对腔室半径、腔室高度、进气口半径以及进气流量4个设计参数进行试验设计,利用商业软件CFD-ACE+建立ICP刻蚀机工艺腔室二维流场仿真模型。
3.Inductively coupled plasma(ICP) dry etching of InP was performed using Cl2/CH4/N2.采用Cl2/CH4/N2感应耦合等离子体对InP进行了刻蚀。
英文短句/例句
1.The Miniaturized Inductively Coupled Plasma Source and Its Characteristics小型感应耦合等离子体源及其等离子体特性
2.inductively coupled plasma mass spectrometers感应耦合等离子体质谱仪
3.general rules for icp emission spectrochemical analysis感应耦合等离子体发射光谱法通则
4.Influence of Different Coil Geometries on Plasma Properties in Inductively Coupled Plasmas;感应耦合等离子体源线圈配置对等离子体特性的影响
5.The Relationship between Plasma Parameters and Chamber Wall Condition in an Inductively Coupled Plasma;感应耦合等离子体器壁条件与等离子体参数的关系
6.The Plasma Properties in Inductively Coupled Plasma Source with Crossing Antenna;正交型天线感应耦合等离子体源的放电特性
7.Investigation of Inductively Coupled Fluorocarbon Plasma and Etching of SiO_2;碳氟感应耦合等离子体及其SiO_2介质刻蚀研究
8.Study on Growth and Structure of a-C:H Films Prepared by an Inductively Coupled Micro-plasma Jet;微感应耦合等离子体源生长碳膜及其结构研究
9.Kinetic Simulations and Experimental Diagnosis of Inductively Coupled Plasma Reactors;射频感应耦合等离子体源的动力学模拟及实验诊断
10.Study of Inductively Coupled Plasma Etch of InP and Fabrication of 14xxnm Pump Laser Diodes;感应耦合等离子体刻蚀InP研究与14xxnm泵浦激光器制作
11.APPLICATION OF INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY IN ENVIRONMENT电感耦合等离子体质谱技术在环境领域的应用
12.inductively coupled plasma atomic emission spectrometry电感耦合等离子体原子发射光谱法
13.inductively coupled microwave plasma torch电感耦合微波等离子体焰炬
14.inductively-coupled plasma spectrometer电感耦合等离子体光谱仪
15.inductively coupled high frequency plasma torch电感耦合高频等离子体焰炬
16.inductively coupled plasma quantometer电感耦合等离子体光量计
17.inductively coupled plasma mass spectrometry电感耦合等离子体质谱法
18.inductively coupled plasma emission spectrometry电感耦合等离子体发射光谱学
相关短句/例句
ICP感应耦合等离子体
1.A novel technique to generate inductively coupled plasma(ICP) with high density has been successfully developed,in which a symmetrical,uniform and spoke-shaped Faraday shield is installed between the inductive coil and the dielectric window in theICP source.感应耦合等离子体(ICP)是微电子工业刻蚀高精度沟槽结构的首选高密度等离子体源。
2.ICP etching plays an important role in mesa structures of photodiodes.感应耦合等离子体(ICP)刻蚀在AlGaN基紫外探测器台面制作中起着重要作用,初步研究了Cl2/Ar/BCl3ICP刻蚀对AlGaN材料的损伤。
3.Inductively coupled plasma(ICP) etching plays an important role in mesa fabrication of AlGaN-based ultraviolet detectors.感应耦合等离子体(ICP)刻蚀在AlGaN基紫外探测器台面制作中起着重要作用。
3)inductively coupled plasmas感应耦合等离子体
1.Effect of antenna configuration on power transfer efficiency for planarinductively coupled plasmas;平板型感应耦合等离子体源的线圈配置对功率耦合效率的影响
4)inductively coupled plasma(ICP)感应耦合等离子体
1.ZrN films have been prepared by inductively coupled plasma(ICP)-enhanced RF magnetron sputtering.利用感应耦合等离子体(ICP)增强射频磁控溅射技术在Si(111)片和M2钢表面制备了ZrN薄膜,研究了基片的温度和ICP功率对ZrN薄膜的结构以及性能影响。
5)inductively coupled plasma-atomic emission spectrophotometer (ICP-AES)感应耦合等离子体(ICP-AES)
6)Inductively coupled plasma source感应耦合等离子体源
延伸阅读
感应耦合感应耦合inductive coupling单位长度的平行导线间的电容值，对距离很近的导线可取c，=一opF/m。图(b)为两条平行导线间磁场祸合的情况，11为干扰源电流有效值，频率为f，通过两导线间的互感M在另一导线的负荷RL:上产生电压UZ，R02为电源内阻，通常RoZ《R12，可用下式计算，即 UZ尧I，口M(2)。一2二f，M可根据公式计算:M一M、l，M飞为单位长度的平行导线间的互感值，对距离很近的导线可取Ml=1拜H/m。式(1)中的C、式(2)中的M都随两导线间距离的增加而减小，故加大干扰源与敏感设备的距离，也是减小感应祸合的方法之一。gonylng ouhe感应报合(induetive eoupling)近场辐射藕合的藕合方式，在工业技术中通常的术语是感应祸合。近场辐射辆合只用于说明基本的物理概念(见辐射藕合)。感应报合分为电场祸合(容性报合)和磁场报合(感性藕合)两种。电场报合和磁场藕合的分析计算通常可用带有集中参数的电容或互感的等效电路.下图为两条导线之间的藕合及其等效电路.图(a)为两条平行导线间电场报合的情况，Ul为干扰源电压有效值，频率为f，通电越目卜· 电场辆合和磁场祸合及等效电路 (a)电场祸合;(b)磁场拐合过两导线间的电容C在另一回路的负荷电阻RLZ上产生干扰电压U:，RoZ为该回路电源内阻，通常RoZ《RL:。因电源电势不影响干扰电压，在图上未表示出。UZ可用下式估算，即 _R，，R。，_。__ U，勺U，口C二二业牛架一勺Uo CR。，(l)一‘一‘一RLZ+RoZ一’一‘、U‘。~2二f，C可根据导线长度l计算:C一‘，l，‘，为
