1)MOCVD金属有机物化学气相沉积
1.The AlGaInP LED with two active regions was designed and grown byMOCVD.设计并用金属有机物化学气相沉积方法生长了双有源区AlGaInP发光二极管,该发光二极管的两个Al-GaInP有源区用高掺杂的反偏隧道结连接。
2.Uniformity-doping and Mg-gradual-δ-doping p-type GaN epilayers are grown on HT-AlN/sapphire templates by metalorganic chemical vapor deposition (MOCVD).利用低压金属有机物化学气相沉积技术,采用均匀掺杂和渐变Mg-δ掺杂方法,分别在氮化镓(GaN)和高温氮化铝(HT-AlN)模板上,生长了p型GaN外延材料。
3.Excessive phosphine is needed to get enough Ⅴ/Ⅲ ratio during common growth process of AlGaInP material byMOCVD in order to get crystal structure with high quality.分别采用1 000 ml/min和400 ml/min的PH3流量(对应的Ⅴ/Ⅲ比分别为723和289),利用低压金属有机物化学气相沉积(LP-MOCVD)系统生长了AlGaInP材料,并使用MOCVD在位监测(in-situ)软件、X射线双晶衍射仪以及光荧光测试系统等对样品进行了测量分析。
1.The triangular pits eliminate of (110) a-plane GaN growth by metal-orgamic chemical vapor deposition金属有机物化学气相沉积生长的a(110)面GaN三角坑缺陷的消除研究
2.Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
3.Iridium Film Prepared by Metal-Organic Chemical Vapor Deposition金属有机化合物化学气相沉积法制备铱薄膜的研究
4.Synthesis and Characterization of Novel Copper（Ⅰ）Complexes as Precursors for Metal-Organic Chemical Vapor Deposition;Cu（Ⅰ）金属有机化学气相沉积前驱物的合成与表征
5.The Praparation and Chemical Mechanism of Functional Graded Materials Using Metal Organic Chemistry Vapour Deposition;金属有机化学气相沉积法制备功能梯度材料的方法和机理的研究
6.Research on Preparing Yttria Coatings by Metalorganic Chemical Vapor Deposition;金属有机化学气相沉积法制备氧化钇涂层的探索研究
7.Growth of ZnO Films on Different Substrates by Metal Organic Chemical Vapor Deposition不同衬底上氧化锌薄膜的金属有机化学气相沉积方法生长(英文)
8.Metal Organic Chemical Vapor Deposition( MOCVD) is a key technology in growing thin-films.金属有机化学气相沉积(OCVD)一门制备薄膜材料的关键技术。
9.A New Preparation Technology of Mica Pearlescent Pigment by Metal Organic Chemistry Vapour Deposition (MOCVD) and Their Application;金属有机化学气相沉积（MOCVD）法制备云母珠光颜料新工艺及应用研究
10.metallo organic chemical vapor deposition有机金属化学汽相淀积
11.Simulation and optimization design in MOCVD reactor金属有机化学气相沉淀反应器结构的模拟优化
12.Fluorides CVD Methods for Refractory Metal In CIS Countries (Ⅰ)独联体国家的难熔金属氟化物化学气相沉积技术（上）
13.Carbon nanotube reinforced metal matrix composites fabricated by in-situ chemical vapor deposition原位化学气相沉积法制备碳纳米管增强金属基复合材料
14.Solubility of Metal Oganic Compound in Supercritical Carbon Dioxide and Its Supercritical Fluid Deposition;金属有机化合物在超临界CO_2中的溶解与沉积研究
15.thermally activated chemical vapour deposition热活化化学气相沉积
16.Studies of Metal Oxides Film Synthesized by Themal Vapor Phase Transport and Condensation;金属氧化物薄膜的热汽相沉积法制备研究
17.thermochemistry of organometallic compounds有机金属化合物热化学
18.chemistry of organometallic compound有机金属化合物化学
相关短句/例句
metalorganic chemical vapor deposition金属有机物化学气相沉积
1.Iridium films were prepared by usingmetalorganic chemical vapor deposition (MOCVD) of iridium tri(acetylacetonate) without oxygen or other gas reactants.在不通入活性气体的条件下,采用三乙酰丙酮铱金属有机物化学气相沉积方法制备铱薄膜。
2.3) grown bymetalorganic chemical vapor deposition with different In and Mg contents.采用金属有机物化学气相沉积方法生长得到具有不同Mg掺杂浓度InxGa1-xN(0≤x≤0。
3.Aluminum gallium indium nitride(AlGaInN)quaternary epilayers were prepared bymetalorganic chemical vapor deposition(MOCVD)on c-plane sapphire(α-Al_2O_3)substrates.利用金属有机物化学气相沉积(MOCVD)方法在c面蓝宝石(α-Al2O3)衬底上外延生长了铝镓铟氮(AlGaInN)四元合金薄膜。
3)metal organic chemical vapor deposition金属有机物化学气相沉积
1.X ray diffraction (XRD) and Raman spectra for a series of high phosphorus content GaN 1-x P x films, with phosphorus content up to 15%, grown by means of light radiation heating, low pressuremetal organic chemical vapor deposition have been investigated.用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN1 -xPx薄膜 利用x射线衍射仪和拉曼光谱仪研究了P对GaN1 -xPx 晶体结构的影响 。
4)metal-organic chemical vapor deposition金属有机物化学气相沉积
1.To overcome these problems, the atmospheric pressuremetal-organic chemical vapor deposition (MOCVD) technology was used to load TiO2 onto the surface of activated carbon.为解决上述问题,采用常压金属有机物化学气相沉积技术在活性炭表面沉积构成纳米 TiO2固定化非均相光催化剂。
5)MOCVD金属有机化学气相沉积
1.The Influential Factors ofMOCVD Growth of InP in Opals;金属有机化学气相沉积法在欧泊空隙中生长磷化铟的影响因素
2.Latest progress on preparation of ferroelectric thin films prepared byMOCVD process;金属有机化学气相沉积制备铁电薄膜材料研究进展
3.The deposition process was carried out in nitrogen by atmospheric pressure metal-organic chemical vapor deposition(MOCVD) with aluminum-tri-sec-butoxide(ATSB) as the precursor.以仲丁醇铝(ATSB)为前驱物、氮气为载气,用金属有机化学气相沉积法(MOCVD)在HP40钢表面沉积了Al2O3薄膜。
6)MOCVD有机金属化学气相沉积
1.Effect of Growth Cycle on SiO_2-InP Fabricated byMOCVD;生长周期对有机金属化学气相沉积法制备SiO_2-InP光子晶体的影响
延伸阅读
金属有机物化学气相沉积金属有机物化学气相沉积(metal organic chemical vapour deposition)又称有机金属化合物气相淀积法。一种利用有机金属热分解反应进行气相外延生长薄膜的化学气相沉积技术。该方法现在主要用于化合物半导体的气相生长上。用该法制备薄膜时，作为含有化合物半导体元素的原料化合物，必须满足常温稳定且易处理，在室温附近有适当的蒸气压，反应的副产物不应妨碍晶体生长，不应污染生长层等条件。因此常选用金属的烷基或芳基衍生物，羟基衍生物、羟基衍生物等为原料。它最主要的特点是沉积温度低。另外由于不采用卤化物原料，因此在沉积中不存在刻蚀反应;适用范围广，几乎可生长所有化合物和合金半导体;生长温度范围宽，适宜大批量生产。但该方法也存在一些缺点:难以进行原位监测生长过程，许多有机金属化合物蒸气有毒、易燃;反应温度低，因此有时在气相中就发生反应。
