C和As共掺杂的γ-Si3N4,Codoped spinel silicon nitride with C and As
1)Codoped spinel silicon nitride with C and AsC和As共掺杂的γ-Si3N4
2)Si3N4 dopingSi3N4掺杂
3)Mn and N co-dopingMn和N共掺杂
4)C-N co-doped titanium dioxideC-N共掺杂二氧化钛
5)γ-Si_3N_4γ-Si3N4
1.The electronic structures and optical properties, the atomic population, bond lengths, band structures and density of states (DOS) of undoped and doped rare earth elements (Y, La) inγ-Si_3N_4 have been calculated by means of plane wave pseudo-potential method (PWP) with generalized gradient approximation (GGA).采用基于密度泛函的平面赝势方法(PWP)和广义梯度近似(GGA),计算了未掺杂和掺杂稀土(Y,La)的γ-Si3N4中N-Y(La)键的布居值和它们的键长、掺杂后能带结构和态密度。
2.Based on the calculations, we analyzed the influence of pressure on the optical and mechanical propertiesγ-Si_3N_4, which indicates thatγ-Si_3N_4 is quite suitable for applications under high pressure.采用基于密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA-PW91),计算了不同压强下γ-Si3N4的电子结构、光学性质和力学性质。
6)carbon dopingC掺杂
1.The mechanism,material property and the effect ofcarbon doping on the high power laser diodes were analyzed.利用低压金属有机金属化合物汽相淀积方法 ,以液态 CCl4为掺杂源生长了高质量 C掺杂 Ga As/Al Ga As材料 ,并对生长机理、材料特性以及 C掺杂对大功率半导体激光器的影响进行了分析。
1.Photoelectrical Performance of TiO_2 Doped with Nitrogen or Carbon;N或C掺杂TiO_2光电化学特性研究
2.Low Temperature Preparation of Mesoporous Carbon-Doped Crystalline TiO_2 and Its Characterization;介孔C掺杂二氧化钛光催化剂的低温制备及表征
3.Structure and electrochemical performance of Mg~(2+) doped LiFePO_4/CMg~(2+)掺杂LiFePO_4/C的结构及电化学性能
4.Effect of Doping with Rare Earth on Electro-Catalytic Performance of Pt-Ru/C Catalyst;稀土元素掺杂对Pt-Ru/C电催化性能的影响
5.The Effect of BN Doping and Interstitialing Atom on the Structure and Physical Properties of C and La_(0.7)Ca_(0.3)MnO_3;BN掺杂和填隙对C和LCMO的结构、物性的影响
6.Synthesis and performance of high tap density LiFePO_4 cathode materials doped with copper ionsCu~(2+)掺杂高密度LiFePO_4/C正极材料的合成及性能
7.Preparation and Photocatalytic Hydrogen Evolution Performance of C-N Co-doped Nano TiO_2 PhotocatalystsC-N共掺杂纳米TiO_2的制备及其光催化制氢活性
8.Effect of Sr-doping for the electro-oxidation of methanol on Pt-CeO_2/C catalystSr掺杂对Pt-CeO_2/C电催化甲醇性能的影响
9.Electro-oxidation of Methanol on Fe-doped Pt-ZrO_2/C Catalyst甲醇在铁掺杂Pt-ZrO_2/C催化剂上的电氧化
10.A substance that adulterates.掺杂物掺有杂质的物质
11.Performance of Pt/C Doped with Ni, Co, Fe, Mo, W for Oxygen Electro-Redution in Alkaline Media;Ni，Co，Fe，Mo，W掺杂的Pt/C在碱性介质中电催化氧还原的性能研究
12.Effect of Rt-Ru/C Doping with W、Ni and Sn for Methanol Electro-Calalytic Oxidation in Alkaline Media;碱性条件下W、Ni和Sn掺杂对Rt-Ru/C电催化氧化甲醇的影响
13.Self-propagating High-temperature Synthesis (SHS) Method MgB_2 Superconductor and SiC, C Doping Phase Transition Process自蔓延法制备MgB_2超导体及其掺杂SiC，C的相变过程研究
14.Research on the Synthesis and Electrochemical Performances of Rare Earth Ions Doped LiFePO_4/C Used as Cathode Materials稀土离子掺杂LiFePO_4/C正极材料的合成及其电化学性能的研究
15.Electronic Properties of Codoped Spinel Silicon Nitride with C and As by DFT MethodC和As共掺杂的γ-Si_3N_4电子性质的密度泛函理论研究
16.PREPARATION AND VISIBLE-LIGHT-INDUCED PHOTOCATALYTIC ACTIVITY OF C,N,S-TRIDOPED TITANIUM DIOXIDE POWDERSC,N,S-掺杂二氧化钛粉体的制备及其可见光光催化性能
17.Performance of Pt/C Doped with Ni for Oxygen Electro-Reduction in Alkaline MediaNi掺杂的Pt/C碱性条件下电催化氧还原性能(英文)
18.Synthesis and Opto-Electronic Properties of the(C~∧N~∧N) Cyclometalated Pt(II) Complexes with Oligofluorene Units化学掺杂寡聚芴单元的(C~∧N~∧N)型环金属化铂配合物的合成及其光电性质
相关短句/例句
Si3N4 dopingSi3N4掺杂
3)Mn and N co-dopingMn和N共掺杂
4)C-N co-doped titanium dioxideC-N共掺杂二氧化钛
5)γ-Si_3N_4γ-Si3N4
1.The electronic structures and optical properties, the atomic population, bond lengths, band structures and density of states (DOS) of undoped and doped rare earth elements (Y, La) inγ-Si_3N_4 have been calculated by means of plane wave pseudo-potential method (PWP) with generalized gradient approximation (GGA).采用基于密度泛函的平面赝势方法(PWP)和广义梯度近似(GGA),计算了未掺杂和掺杂稀土(Y,La)的γ-Si3N4中N-Y(La)键的布居值和它们的键长、掺杂后能带结构和态密度。
2.Based on the calculations, we analyzed the influence of pressure on the optical and mechanical propertiesγ-Si_3N_4, which indicates thatγ-Si_3N_4 is quite suitable for applications under high pressure.采用基于密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA-PW91),计算了不同压强下γ-Si3N4的电子结构、光学性质和力学性质。
6)carbon dopingC掺杂
1.The mechanism,material property and the effect ofcarbon doping on the high power laser diodes were analyzed.利用低压金属有机金属化合物汽相淀积方法 ,以液态 CCl4为掺杂源生长了高质量 C掺杂 Ga As/Al Ga As材料 ,并对生长机理、材料特性以及 C掺杂对大功率半导体激光器的影响进行了分析。
延伸阅读
[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]分子式：C16H16ClN3O3S分子量：365.5CAS号：26807-65-8性质：暂无制备方法：暂无用途：用于轻、中度原发性高血压。
