1)Ceramic medium陶瓷媒介
2)dielectric ceramics介电陶瓷
1.A study of Mgo-doped (Sr,Bi)TiO_3dielectric ceramics;钛酸锶铋介电陶瓷中MgO掺杂研究
2.Study status of modified properties for zinc titanate microwavedielectric ceramics;钛酸锌微波介电陶瓷的改性研究现状
1.LOW FIRING SINTERING OF BaTi_4O_9 DIELECTRIC CERAMICSBaTi_4O_9介电陶瓷的低温烧结
2.glass ceramic capacitor玻璃陶瓷介质电容器
3.Preparation of Low Loss Tangent AlN Ceramics and BN-AlN Composites低介电损耗AlN陶瓷及BN-AlN基陶瓷材料研究
4.Research on the Dielectric Properties of BaTiO_3 Ceramics;BaTiO_3基介质陶瓷介电性能研究
5.(Mg_(1-x)Zn_x)Al_2O_4 Low Dielectric Constant Microwave Dielectric Ceramics;（Mg_（1-x）Zn_x）Al_2O_4低介电常数微波介质陶瓷
6.Dielectric Properties of Bi_2O_3-ZnO-Nb_2O_5 System Ceramicβ-BZN介质陶瓷材料介电性能研究
7.Effect of BiVO_4 Doping on Dielectric Properties of CLST Microwave Dielectric CeramicsBiVO_4掺杂对CLST介质陶瓷介电性能的影响
8.THE RECENT PROGRESS OF LOW DIELECTRIC CONSTANT MICROWAVE DIELECTRIC CERAMICS低介电常数微波介质陶瓷的研究进展
9.Study on Piezoceramics with High Dielectric and High Piezoelectric Coefficient;高介电、高压电常数压电陶瓷的研究
10.Preparation of power doped BTO-based piezoelectric ceramic and its dielectric properties掺杂BTO基压电陶瓷制备及介电性能
11.Study on the Dielectric Behavior of Bi(Mg_(2/3)Nb_(1/3))O_3 Doped Na_(1/2)Bi_(1/2)TiO_3 Piezoelectric CeramicsBMN掺杂NBT压电陶瓷的介电特性研究
12.multilayer dielectric ceramic fixed capacitor多层陶瓷介质固定电容器
13.Ceramic dielectric materials used for capacitorsGB/T5596-1996电容器用陶瓷介质材料
14.single layer dielectric ceramic fixed capacitor单层陶瓷介质固定电容器
15.ceramic dielectric fixed capacitor, multilayer多层陶瓷介质的固定电容器
16.ceramic dielectric fixed capacitor, single layer单层陶瓷介质的固定电容器
17.Study of Dielectric Mechanism of Microwave Dielectric Ceramics with Perovskite Structure;钙钛矿结构微波陶瓷介电机理的研究
18.Investigation on the Dielectric Properties of CaCu_3Ti_4O_(12) Ceramics;CaCu_3Ti_4O_（12）陶瓷的介电性能研究
相关短句/例句
dielectric ceramics介电陶瓷
1.A study of Mgo-doped (Sr,Bi)TiO_3dielectric ceramics;钛酸锶铋介电陶瓷中MgO掺杂研究
2.Study status of modified properties for zinc titanate microwavedielectric ceramics;钛酸锌微波介电陶瓷的改性研究现状
3)Dielectric ceramic介电陶瓷
1.In this paper, the processing of prepare BaNd 2 Ti 5 O 14 dielectric ceramic formed by Gelcasting has been studied.讨论了用凝胶注模成型制备BaNd2Ti5O14介电陶瓷的过程。
4)dielectric ceramic介质陶瓷
1.The Study of Low-temperature Sintered Microwave Dielectric Ceramics and Multilayer Chip Bandpass Filter;低温烧结微波介质陶瓷及多层片式带通滤波器研究
2.ZnNb2O5dielectric ceramics doped with V2O5 were prepared by conventional mixed solid method.采用传统的固相反应法制备了V2O5掺杂ZnNb2O6介质陶瓷,借助XRD、SEM和LCR测试仪等研究了陶瓷的烧结特性及介电性能。
3.Dielectric ceramic coaxial resonators have been used in microwave commmunation field,they have three basic structures.介质陶瓷同轴谐振器广泛用于微波通讯领域,它有三种基本结构。
5)dielectric ceramics介质陶瓷
1.This paper covers the latest development and properties of microwavedielectric ceramics,factors having effect on and ways to improve their properties,and compositions, properties and applications of BaO-TiO2 system.综述了微波介质陶瓷材料的发展现状、特性及影响因素，讨论了提高微波介质材料性能的途径，并对研究最多的三个材料体系：BaO-TiO2体系、BaO-Ln2O3-TiO2体系（Ln＝Nd，Sm，La）、A（B′1/3B″2/3）O3体系分别予以详细介绍，内容包括：配比、性能、应用以及今后的发展方向。
6)ceramic dielectric陶瓷介质
1.How the five causes,ceramic dielectric and inner electrode paste,the ceramic tape density,the Ni layer weight,BBO and sintering,cause to capacitor crack were deeply studied.本中对陶瓷介质与内电极浆料的匹配、膜片密度、Ni重、排胶、烧结这五个因素是如何导致电容器开裂进行了深入的分析。
延伸阅读
复介电常数复介电常数complex dielectric constant倒￡“ED(t)=“(田)及cos田t+￡，，(留)凡sin山t(1)相角子，即式中:/(。卜会cos“(。)，:。(。卜会sin“(。)(2)tg占=损耗电流11_f充电电流Ic一万 (7)即在交变电场下，D(t)和E(t)的关系要用两个物理量口和了来表征。上式中，相位占和了、了都是频率的函数，且与温度和电介质结构密切相关。D(t)可分解为两个分量:一个与E同相位，另一与E有90。相位差。如将上述关系用复数表示，且令君*=Eoe，“‘，D*=Doej(“一泞)，则刀‘与E*的关系可表示为 D*(t)=‘*(臼)E*(t)(3)在式中引入复数介电常数扩=了一j已，则 二(田卜;斜一会一‘一‘(田卜j一‘。，“，静态时，。=0、占=0。即￡，，=O，式(3)可表示为D=二，(0)E，其中￡，(O)即为静态介电常数￡s。可见，g(。)是静态介电常数在交变场下的推广，e’(。)称为频率依赖的介电常数。动态时，在真空电容器中，电流虽然超前电场二/2，但由于占=0，而不产生损耗;故在具有介电常数的电容器中，单位时间、单位体积中损耗的能量评，可由E及与E同相的电流分量。扩E的乘积表示，即]。“E图1电介质中交流电场E 与电流I的矢量图部和虚部表示，而弛豫时间为 根据复介电常数定 义，由式(4)并经简化 处理后可得 ￡*(臼)=￡‘(臼)一j￡“6二一己。/。、 t田】=E。十二~一，犷一一~气己少 1一」田T 上式称为德拜公式，用 来表征复介电常数的频 率特性。如将其分成实:时，则得已=昆+65一三.l+田2r2(￡。一氛)田T1十田2丁2已，，tg口一=万，二 Q(‘s一几)田丁￡s+氛田2丁2 (9)(10)(11)W一晋DOEOS‘n“一晋“‘“一‘E’“‘g“(5，合(￡·l一(去‘一‘。210 10()四T由于了的变化不大，因而能量损耗与复介电常数的虚部已成正比。式(4)中了(动称为介质的损耗因子。式(5)中占称为介质损耗角，tg沙称为介质损耗角正切或介电耗散因子。在交流电路中，若置介质于平板电容器中，并在两极间外加交流电压VV=Voej“。.，_L一~~，卜。尸。
